描述

The 600 V, 30 A hard-switching TRENCHSTOP? IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

特性

? Lowest VCEsatdrop for lower conduction losses

? Low switching losses

? Easy parallel switching capability due to positive temperature coefficient in VCEsat

? Very soft, fast recovery anti-parallel Emitter Controlled Diode

? High ruggedness, temperature stable behavior

? Low EMI emissions

? Low gate charge

? Very tight parameter distribution

優(yōu)勢(shì):

? Highest efficiency – low conduction and switching losses

? Comprehensive portfolio in 600 V and 1200 V for flexibility of design

? High device reliability