深圳市賽佰斯科技有限公司

SEMIX604GB12E4S

電壓:1200 V
電流:600 A
封裝:SEMiX 4s
長(zhǎng)度:182.5 mm
寬度:69 mm
高度:17 mm
產(chǎn)品詳情

產(chǎn)品概述

IGBT Array & Module Transistor, Dual N Channel, 916A, 1.8V, 1.2kV, SEMiX 4s


**Features:


**


* IGBT4 = 4. Generation (Trench) IGBT


* VCEsat with Positive Temperature Coefficient


* High short circuit Capability, Self Limiting to 6 × ICNOM


* Electronic Welders at fSW Up-to-20 kHz


**Applications:**


* AC Inverter Drives


* UPS


* Electronic Welders at fSW Up-to-20 kHz


咨詢熱線 : 13928491795                    郵箱:[email protected]                   地址 : 深圳市龍華區(qū)龍華街道富康社區(qū)天匯大廈D棟4層D417室